ES1J R3G Tech Spezifikatioune
Taiwan Semiconductor Corporation - ES1J R3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - ES1J R3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-214AC (SMA) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AC, SMA | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 18pF @ 4V, 1MHz | |
| Basis Produktnummer | ES1J |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation ES1J R3G.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | ES1J R3G | ES1GLW RVG | ES1J M2G | ES1G_R1_00001 |
| Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | TSC (Taiwan Semiconductor) | Panjit International Inc. |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 400 V | 600V | 400 V |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Supplier Device Package | DO-214AC (SMA) | SOD-123W | DO-214AC (SMA) | SMA (DO-214AC) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery = 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA | SOD-123W | DO-214AC, SMA | DO-214AC, SMA |
| Capacitance @ Vr, F. | 18pF @ 4V, 1MHz | 20pF @ 4V, 1MHz | 18pF @ 1V, 1MHz | 7pF @ 4V, 1MHz |
| Serie | - | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 1 A | 1.3 V @ 1 A | 1.7V @ 1A | 1.25 V @ 1 A |
| Basis Produktnummer | ES1J | ES1G | - | ES1G |
| Technologie | Standard | Standard | - | Standard |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | 35ns | 35 ns |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | 5 µA @ 400 V | 5µA @ 600V | 1 µA @ 400 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden ES1J R3G PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir ES1J R3G - Taiwan Semiconductor Corporation.
ES1J 2K/RES1G_R2_00001PANJITES1GR2TAIWANSEMES1J E2
ES1J-FLITEONES1J-13 T/RLITEONES1J-GS-2GULF
ES1J-E3/61TElectro-Films (EFI) / VishayES1J-HBHBES1GLW RVGTaiwan Semiconductor CorporationDIODE GEN PURP 400V 1A SOD123WES1J-LE_R1_00001PANJITES1J-E3Electro-Films (EFI) / VishayES1J M2GTSC (Taiwan Semiconductor)DIODE GEN PURP 600V 1A DO214ACES1G_R1_00001Panjit International Inc.DIODE GEN PURP 400V 1A SMA
ES1J-LTPMicro Commercial CoDIODE GEN PURP 600V 1A DO214ACES1J T/RPANJIT
ES1G_NLFairchild (onsemi)ES1GLWHRVGTaiwan Semiconductor CorporationDIODE GEN PURP 400V 1A SOD123W| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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